Silicon Power SP001GBLDU333O02 Datasheet download pdf

SP001GBLDU333O02

184pin DDR1 333 Unbuffered DIMM

This document is a general product description and is subject to change without notice

1. Description

The SP001GBLDU333O02 is a 64M x 8bits Double Data Rate SDRAM high-density

for DDR1-333.The SP001GBLDU333O02 consists of 16pcs CMOS 64x8 bits Double Data

Rate SDRAMs in 66 pin TSOP package, and a 2048 bits serial EEPROM on a 184-pin printed

circuit board. The SP001GBLDU333O02 is a Dual In-Line Memory Module and is intended

for mounting into 184-pin connector sockets. Synchronous design allows precise cycle

control with the use of system clock. Data I/O transactions are possible on both edges of

DQS. Range of operation frequencies, programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance memory system applications.

2. Features

․Double--data--rate architecture; two data transfers per clock cycle

․Bidirectional, data strobe (DQS) is transmitted/received with data, to be used in capturing

data at the receiver

․DQS is edge--aligned with data for READs; center--aligned with data for WRITEs

․Differential clock inputs (CK and /CK)

․DLL aligns DQ and DQS transitions with CK transitions

․Commands entered on each positive CK edge; data and data mask referenced to both

edges of DQS

․Four internal banks for concurrent operation

․Data mask (DM) for write data

․Burst lengths: 2, 4, or 8

․AUTOPRECHARGE option for each burst access

․Auto Refresh and Self Refresh Modes

․JEDEC standard 2.5 V (SSTL_2 compatible) I/O

․66pin TSOP II Leaded & Pb-Free (RoHS compliant) package

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SP001GBLDU333O02 184pin DDR1 333

SP001GBLDU333O02 184pin DDR1 333

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Silicon Power SP001GBLDU333O02 Datasheet